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可控硅二极管电泳保护装置标准试验规范
Standard Test Specification for Thyristor Diode Surge Protective Devices
参考页数：56P.;A4
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半导体信号二极管用反向恢复时间测量/注释:1999-04-00批准.
Measurement of Reverse Recovery Time for Semiconductor Signal Diodes / Note: Approved 1999-04-00.
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二级管Q值测量法
Method of Diode "Q" Measurement
参考页数：
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二级管静态参数测量的热平衡条件
Thermal Equilibrium Conditions for Measurement of Diode Static Parameters
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稳压二极管的噪声电压测量.注:2002-04-00批准
Voltage Regulator Diode Noise Voltage Measurement / Note: Approved 2002-04-00.
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半导体器件.第3部分:分立器件:信号二极管、开关二极管及调整二极管
Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
参考页数：69P;A4
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低压浪涌保护装置用元件 第341部分：晶闸管浪涌抑制器（TSS）规范
Components for low-voltage surge protective devices - Part 341: Specification for thyristor surge suppressors (TSS)
参考页数：123P.;A4
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半导体装置.分立装置.第4部分:微波二极管和晶体管
Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
参考页数：279P.;A4
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半导体器件 分立器件 第2部分:整流二极管 第1节:电流在100A以上环境和外壳额定的整流二极管(包括雪崩整流二极管)空白详细规范
Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
参考页数：31P.;A4
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低压浪涌保护装置的元件 第321部分：雪崩击穿二极管（ABD）规范
Components for low-voltage surge protection devices - Part 321: Specifications for Avalanche Breakdown Diode (ABD)
参考页数：31P.;A4
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