|
低频放大管壳额定的双极型晶体管空白详细规范
Blank detail specification for case-rated bipolar transistors for low-frequency amplification
价格：￥0.00
|
|
|
|
|
|
半导体器件 分立器件 第7部分;双极型晶体管 第四篇 高频放大管壳额定双极型晶体管空白详细规范
Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section Four--Blank detail specification for case-rated bipolar transistors for high-frequency amplification
价格：￥0.00
|
|
|
|
|
|
半导体分立器件和集成电路 第7部分:双极型晶体管
Semiconductor discrete devices and integrated circuits. Part 7:Bipolar transistors
价格：￥0.00
|
|
|
|
|
|
半导体器件 分立器件 第3部分:信号(包括开关)和调整二极管
Semiconductor devices--Discrete devices. Part 3: Signal(including switching)and regulator diodes
价格：￥0.00
|
|
|
|
|
|
工业加热三极管空白详细规范(可供认证用)
Blank detail specification for industrial heating triodes
价格：￥0.00
|
|
|
|
|
|
开关用双极型晶体管空白详细规范
Blank detail specification for bipolar transistors for switching applications
价格：￥0.00
|
|
|
|
|
|
半导体器件 分立器件 第7部分;双极型晶体管 第一篇 高低频放大环境额定的双极型晶体管空白详细规范
Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section One--Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification
价格：￥0.00
|
|
|
|
|
|
半导体器件 分立器件 第8部分;场效应晶体管 第一篇 1GHz、5W以下的单栅场效应晶体管空白详细规范
Semiconductor devices--Discrete devices. Part 8: Field-effect transistors. Section One--Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
价格：￥0.00
|
|
|
|
|
|
半导体器件 分立器件 第8部分:场效应晶体管
Semiconductor devices. Discrete devices. Part 8: Field-effect transistors
价格：￥0.00
|
|
|
|
|
|
电子元器件详细规范 3DG1825型硅NPN环境额定高频放大晶体管(可供认证用)
价格：￥0.00
|
|
|
|
|
